CAPACITANCES IN DOUBLE-BARRIER TUNNELING STRUCTURES

被引：40

作者：

GENOE, J ^{[1
]}

VANHOOF, C ^{[1
]}

VANROY, W ^{[1
]}

SMET, JH ^{[1
]}

FOBELETS, K ^{[1
]}

MERTENS, RP ^{[1
]}

BORGHS, G ^{[1
]}

机构：

[1] VRIJE UNIV BRUSSELS,DEPT ELECT ENGN,B-1050 BRUSSELS,BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 09期

关键词：

D O I：

10.1109/16.83722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Capacitances in a double-barrier tunneling structure are calculated for the specific sequential electron tunneling regime. Starting from Luryi's definition of quantum capacitance, we model the charge accumulation in the well during the tunneling process using the Fermi-Dirac distribution. A complete small-signal model is proposed resulting in the external capacitance and conductance of the structure and its frequency behavior. The model is in good agreement with experimental data.

引用

页码：2006 / 2012

页数：7

共 23 条

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