SPACE-CHARGE EFFECTS AND AC RESPONSE OF RESONANT TUNNELING DOUBLE-BARRIER DIODES

被引：15

作者：

SHEARD, FW

TOOMBS, GA

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90254-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1443 / 1447

页数：5

共 10 条

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[5] CHARGE BUILDUP AND INTRINSIC BISTABILITY IN AN ASYMMETRIC RESONANT-TUNNELING STRUCTURE [J].

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[6]

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[9] SPACE-CHARGE BUILDUP AND BISTABILITY IN RESONANT-TUNNELING DOUBLE-BARRIER STRUCTURES [J].

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[10] RESONANT TUNNELING AND INTRINSIC BISTABILITY IN ASYMMETRIC DOUBLE-BARRIER HETEROSTRUCTURES [J].

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