SYNCHROTRON-RADIATION-INDUCED REACTIONS OF A CONDENSED LAYER OF SILICON ALKOXIDE ON SI

被引：5

作者：

KINASHI, K ^{[1
]}

NIWANO, M ^{[1
]}

SAWAHATA, JI ^{[1
]}

SHIMOSHIKIRYO, F ^{[1
]}

MIYAMOTO, N ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.579674

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors have investigated the synchrotron radiation (SR) induced chemical reactions of condensed layers of silicon alkoxides, tetramethoxysilane Si(OCH3)(4) and tetraethoxysilane Si(OC2H5)(4), adsorbed on a Si substrate at 80 K. Photon stimulated desorption measurements show that irradiation with SR in the vacuum-ultraviolet region induces the desorption of hydrogen, hydrocarbon, and carbon monoxide from the condensed layer, indicating that the radiation decomposes the alkoxyl group in the silicon alloxides. Infrared absorption and photoemission data demonstrate that Si-containing fragments produced by the decomposition of silicon alkoxide molecules are polymerized to form silicon oxide. The experimental results show the possibility of deposition silicon oxide film from silicon alkoxides using intense SR in the VUV region. (C) 1995 American Vacuum Society.

引用

页码：1879 / 1884

页数：6

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