A THEORETICAL-STUDY OF GATE DRAIN OFFSET IN LDD MOSFETS

被引：11

作者：

LEE, J

MAYARAM, K

HU, CM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 03期

关键词：

D O I：

10.1109/EDL.1986.26328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：152 / 154

页数：3

共 11 条

[1]

DUVVURY C, 1983, DEC IEDM, P388

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].

ELMANSY, YA ;

BOOTHROYD, AR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262

[3] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[4] SUBMICROMETER DEVICE DESIGN FOR HOT-ELECTRON RELIABILITY AND PERFORMANCE [J].

HUI, J ;

MOLL, J .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :350-352

[5] A NEW SUBSTRATE AND GATE CURRENT PHENOMENON IN SHORT-CHANNEL LDD AND MINIMUM OVERLAP DEVICES [J].

HUI, J ;

HSU, FC ;

MOLL, J .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :135-138

[6]

KO PK, 1981, DEC IEDM, P600

[7] OPTIMUM DESIGN OF N+-N- DOUBLE-DIFFUSED DRAIN MOSFET TO REDUCE HOT-CARRIER EMISSION [J].

KOYANAGI, M ;

KANEKO, H ;

SHIMIZU, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :562-570

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[9]

PINTO MR, 1984, PISCES 2 POISSON CON

[10] AN ANALYTICAL MODEL FOR THE CHANNEL ELECTRIC-FIELD IN MOSFETS WITH GRADED-DRAIN STRUCTURES [J].

TERRILL, KW ;

HU, C ;

KO, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :440-442

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