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SCANNING INTERNAL PHOTOEMISSION-STUDIES OF SODIUM-CONTAMINATED METAL-OXIDE-SEMICONDUCTOR CAPACITORS
被引:7
作者
:
BOUTHILLIER, TM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
BOUTHILLIER, TM
[
1
]
YOUNG, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
YOUNG, L
[
1
]
TSOI, HY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
TSOI, HY
[
1
]
机构
:
[1]
UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1983年
/ 54卷
/ 02期
关键词
:
D O I
:
10.1063/1.332020
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:957 / 962
页数:6
相关论文
共 19 条
[1]
BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION
DISTEFAN.TH
论文数:
0
引用数:
0
h-index:
0
DISTEFAN.TH
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(08)
: 280
-
&
[2]
DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
DISTEFANO, TH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
: 527
-
528
[3]
KERN W, 1970, RCA REV, V31, P186
[4]
DIELECTRIC LOSS AND CURRENT-VOLTAGE MEASUREMENTS IN SODIUM-CONTAMINATED SI-SIO2-CR STRUCTURES
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
KRIEGLER, RJ
BARTNIKA.R
论文数:
0
引用数:
0
h-index:
0
机构:
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
BARTNIKA.R
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(08)
: 722
-
731
[5]
KRIEGLER RJ, 1973, 11TH P REL PHYS S LA, P153
[6]
TIME-DEPENDENT MOS BREAKDOWN
LI, SP
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
LI, SP
BATES, ET
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
BATES, ET
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
MASERJIAN, J
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(03)
: 235
-
239
[7]
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[8]
ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
OSBURN, CM
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1377
-
1384
[9]
EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
OSBURN, CM
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RAIDER, SI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1369
-
1376
[10]
OSBURN CM, 1974, J ELECTROCHEM SOC, V121, P1196
←
1
2
→
共 19 条
[1]
BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION
DISTEFAN.TH
论文数:
0
引用数:
0
h-index:
0
DISTEFAN.TH
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(08)
: 280
-
&
[2]
DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
DISTEFANO, TH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
: 527
-
528
[3]
KERN W, 1970, RCA REV, V31, P186
[4]
DIELECTRIC LOSS AND CURRENT-VOLTAGE MEASUREMENTS IN SODIUM-CONTAMINATED SI-SIO2-CR STRUCTURES
KRIEGLER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
KRIEGLER, RJ
BARTNIKA.R
论文数:
0
引用数:
0
h-index:
0
机构:
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
BELL CANADA NO ELECT RES LTD,RES & DEVICE DEV DIV,ONTARIO,CANADA
BARTNIKA.R
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(08)
: 722
-
731
[5]
KRIEGLER RJ, 1973, 11TH P REL PHYS S LA, P153
[6]
TIME-DEPENDENT MOS BREAKDOWN
LI, SP
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
LI, SP
BATES, ET
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
BATES, ET
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
MASERJIAN, J
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(03)
: 235
-
239
[7]
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO
[8]
ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
OSBURN, CM
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
CHOU, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1377
-
1384
[9]
EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
OSBURN, CM
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RAIDER, SI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1369
-
1376
[10]
OSBURN CM, 1974, J ELECTROCHEM SOC, V121, P1196
←
1
2
→