GAS SOURCE SI-MBE

We have devised a gas source Si-MBE apparatus. Using this apparatus, we have investigated characteristic advantages of gas source Si-MBE. In gas source Si-MBE, spitting-defect-free films were obtained. B, Sb and P doping were possible using a HBO2 cell, an ionization cell and a PH3 gas doping method, respectively. Selective epitaxial growth was achieved. P- and B-doped selective epitaxial growth using gas source Si-MBE was applied to bipolar transistor fabrication. The fabricated transistor showed normal common-emitter I-V characteristics (hFE ∼ 30). Si1-xGex selective epitaxial growth was also achieved using disilane and germane source gases. This Si1-xGex selective epitaxial growth was applied to Si1-xGex/Si hetero-diode and Si1-xGex base heterojunction bipolar transistor fabrication. © 1990.