MICROMACHINED TUNNELING DISPLACEMENT TRANSDUCERS FOR PHYSICAL SENSORS

被引:19
作者
KENNY, TW
KAISER, WJ
PODOSEK, JA
ROCKSTAD, HK
REYNOLDS, JK
VOTE, EC
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期
关键词
D O I
10.1116/1.578351
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have designed and constructed a series of tunneling sensors which take advantage of the extreme position sensitivity of electron tunneling. In these sensors, a tunneling displacement transducer, based on scanning tunneling microscopy principles, is used to detect the signal-induced motion of a sensor element. Through the use of high-resonant frequency mechanical elements for the transducer, sensors may be constructed which offer wide bandwidth, and are robust and easily operated. Silicon micromachining may be used to fabricate the transducer elements, allowing integration of sensor and control electronics. Examples of tunneling accelerometers and infrared detectors will be discussed. In each case, the use of the tunneling transducer allows miniaturization of the sensor as well as enhancement of the sensor
引用
收藏
页码:797 / 802
页数:6
相关论文
共 33 条
[21]   SILICON AS A MECHANICAL MATERIAL [J].
PETERSEN, KE .
PROCEEDINGS OF THE IEEE, 1982, 70 (05) :420-457
[22]   MICROMECHANICAL ACCELEROMETER INTEGRATED WITH MOS DETECTION CIRCUITRY [J].
PETERSEN, KE ;
SHARTEL, A ;
RALEY, NF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :23-27
[23]   A MICROMECHANICAL CAPACITIVE ACCELEROMETER WITH A 2-POINT INERTIAL-MASS SUSPENSION [J].
RUDOLF, F .
SENSORS AND ACTUATORS, 1983, 4 (02) :191-198
[24]  
RUGAR D, 1988, REV SCI INSTRUM, V59, P11
[25]   A MONOLITHIC CAPACITIVE PRESSURE SENSOR WITH PULSE-PERIOD OUTPUT [J].
SANDER, CS ;
KNUTTI, JW ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :927-930
[26]   ANALYSIS, DESIGN, AND PERFORMANCE OF A CAPACITIVE PRESSURE SENSOR IC [J].
SMITH, MJS ;
BOWMAN, L ;
MEINDL, JD .
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1986, 33 (02) :163-174
[27]   A BALANCED DUAL-DIAPHRAGM RESONANT PRESSURE SENSOR IN SILICON [J].
STEMME, E ;
STEMME, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :648-653
[28]   AN ELECTRON-TUNNELING SENSOR [J].
WALTMAN, SB ;
KAISER, WJ .
SENSORS AND ACTUATORS, 1989, 19 (03) :201-210
[29]   MAGNETIC-FIELD SENSING WITH MAGNETOSTRICTIVE MATERIALS USING A TUNNELING TIP DETECTOR [J].
WANDASS, JH ;
MURDAY, JS ;
COLTON, RJ .
SENSORS AND ACTUATORS, 1989, 19 (03) :211-225
[30]   SPATIAL LOCATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY [J].
WELLAND, ME ;
KOCH, RH .
APPLIED PHYSICS LETTERS, 1986, 48 (11) :724-726