SPUTTERING YIELD OF CARBON-ATOMS IN ORGANIC MATERIALS FOR OXYGEN BOMBARDMENT

被引：26

作者：

GOKAN, H

ESHO, S

机构：

来源：

关键词：

D O I：

10.1149/1.2115759

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1105 / 1109

页数：5

共 9 条

[1] PLASMA-ETCHING - DISCUSSION OF MECHANISMS
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403
[2] DRY ETCH RESISTANCE OF ORGANIC MATERIALS
GOKAN, H
ESHO, S
OHNISHI, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 143 - 146
[3] OXYGEN ION-BEAM ETCHING FOR PATTERN TRANSFER
GOKAN, H
ITOH, M
ESHO, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 34 - 37
[4] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554
[5] REACTIVE ION-BEAM ETCHING WITH CF4 - CHARACTERIZATION OF A KAUFMAN ION-SOURCE AND DETAILS OF SIO2 ETCHING
MAYER, TM
BARKER, RA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : 585 - 591
[6] SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES
MAYER, TM
BARKER, RA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 757 - 763
[7] INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS
MAYER, TM
BARKER, RA
WHITMAN, LJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 349 - 352
[8] HIGH-RESOLUTION, STEEP PROFILE, RESIST PATTERNS
MORAN, JM
MAYDAN, D
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (05): : 1027 - 1036
[9] REICHELDERFER RF, 1977, J ELCHEM SO, V124, P1927