GROWTH OF INAS BY MOVPE - A COMPARATIVE-STUDY USING ARSINE, TERTIARYBUTYLARSINE AND PHENYLARSINE

被引:21
作者
HAYWOOD, SK [1 ]
MARTIN, RW [1 ]
MASON, NJ [1 ]
WALKER, PJ [1 ]
机构
[1] UNIV OXFORD,CLARENDON LAB,PARKS RD,OXFORD,ENGLAND
关键词
D O I
10.1016/0022-0248(89)90231-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:489 / 496
页数:8
相关论文
共 39 条
  • [1] A MASS-SPECTROMETRIC STUDY OF THE REACTION OF TRIETHYLINDIUM WITH ARSINE GAS
    AGNELLO, PD
    GHANDHI, SK
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (06) : 1530 - 1534
  • [2] BALIGA BJ, 1974, J ELECTROCHEM SOC, V121
  • [3] LONG WAVELENGTH INAS1-XSBX/GAAS DETECTORS PREPARED BY MOLECULAR-BEAM EPITAXY
    BETHEA, CG
    YEN, MY
    LEVINE, BF
    CHOI, KK
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1431 - 1432
  • [4] THE USE OF ORGANIC AS PRECURSORS IN THE LOW-PRESSURE MOCVD OF GAAS
    BRAUERS, A
    KAYSER, O
    KALL, R
    HEINECKE, H
    BALK, P
    HOFMANN, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 7 - 14
  • [5] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS
    BUBULAC, LO
    ANDREWS, AM
    GERTNER, ER
    CHEUNG, DT
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 734 - 736
  • [6] EFFECT OF LATTICE MISMATCH ON THE ELECTRON MOBILITIES OF INAS GROWN ON GAAS BY MBE
    CHANG, CA
    SERRANO, CM
    CHANG, LL
    ESAKI, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 603 - 605
  • [7] STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES
    CHANG, CA
    SERRANO, CM
    CHANG, LL
    ESAKI, L
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 538 - 540
  • [8] CHANG CH, 1987, APPL PHYS LETT, V50, P218
  • [9] ELECTRONIC-PROPERTIES OF INAS-GASB SUPER-LATTICES
    CHANG, LL
    ESAKI, L
    [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 70 - 89
  • [10] BACKSIDE-ILLUMINATED INAS1-XSBX-INAS NARROW-BAND PHOTODETECTORS
    CHEUNG, DT
    ANDREWS, AM
    GERTNER, ER
    WILLIAMS, GM
    CLARKE, JE
    PASKO, JG
    LONGO, JT
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 587 - 589