LOW-TEMPERATURE EPITAXY BY IONIZED-CLUSTER BEAM

被引：65

作者：

YAMADA, I

TAKAOKA, H

USUI, H

TAKAGI, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573819

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：722 / 727

页数：6

共 22 条

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[2] Chen Gongning, COMMUNICATION
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INOKAWA, H
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TAKAGI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03): : L173 - L174
[4] KOYANAGI T, 1985, 9TH P S ION SOURC IO, P397
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[6] EVALUATION OF METAL AND SEMICONDUCTOR-FILMS FORMED BY IONIZED-CLUSTER BEAM DEPOSITION
TAKAGI, T
YAMADA, I
SASAKI, A
[J]. THIN SOLID FILMS, 1976, 39 (DEC) : 207 - 217
[7] IONIZED-CLUSTER BEAM EPITAXY OF CDTE AND ITS APPLICATION TO CDTE/PBTE MULTILAYER STRUCTURE
TAKAGI, T
TAKAOKA, H
KURIYAMA, Y
MATSUBARA, K
[J]. THIN SOLID FILMS, 1985, 126 (1-2) : 149 - 154
[8] ION-SURFACE INTERACTIONS DURING THIN-FILM DEPOSITION
TAKAGI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 382 - 388
[9] TAKAGI T, 1972, 2ND P INT C ION SOUR, P790
[10] UEDA A, 1985, 9TH P S ION SOURC IO, P45