ELECTRON-MOBILITY IN EPITAXIAL SILICON NEAR A SAPPHIRE SUBSTRATE

被引：3

作者：

LEHOVEC, K ^{[1
]}

LIN, ST ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 05期

关键词：

D O I：

10.1063/1.322853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2088 / 2091

页数：4

共 19 条

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[4]

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[6] INVESTIGATION OF CARRIER TRANSPORT IN THIN SILICON-ON-SAPPHIRE FILMS USING MIS DEEP DEPLETION HALL-EFFECT STRUCTURES [J].

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SOLID-STATE ELECTRONICS, 1972, 15 (05) :531-+

[7] INVESTIGATION OF SILICON-SAPPHIRE INTERFACE USING MIS CAPACITANCE METHOD [J].

GOODMAN, AM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) :63-65

[8] SURFACE CHARGE EFFECTS ON RESISTIVITY AND HALL-COEFFICIENT OF THIN SILICON-ON-SAPPHIRE FILMS [J].

HAM, WE .

APPLIED PHYSICS LETTERS, 1972, 21 (09) :440-+

[9]

HSU ST, 1975, RCA REV, V36, P240

[10] HALL-EFFECT IN SILICON ON SAPPHIRE [J].

HYNECEK, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2806-2807

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