DEVICE PERFORMANCE DEGRADATION DUE TO HOT CARRIERS HAVING ENERGIES BELOW THE SI-SIO2 ENERGY BARRIER

被引：10

作者：

TAKEDA, E ^{[1
]}

HAGIWARA, T ^{[1
]}

SUZUKI, N ^{[1
]}

机构：

[1] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3180 / 3182

页数：3

共 15 条

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[10] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION [J].

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :111-113

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