SILICON SURFACE-ROUGHNESS - STRUCTURAL OBSERVATION BY REFLECTION ELECTRON-MICROSCOPY

被引：10

作者：

HONDA, K

OHSAWA, A

TOYOKURA, N

机构：

来源：

关键词：

D O I：

10.1063/1.96719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：779 / 781

页数：3

共 11 条

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[3] COWLEY JM, 1984, MATER RES S P, V31, P177
[4] BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES
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OHSAWA, A
TOYOKURA, N
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 270 - 271
[5] BREAKDOWN IN SILICON-OXIDES .2. CORRELATION WITH FE PRECIPITATES
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OHSAWA, A
TOYOKURA, N
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 582 - 584
[6] REFLECTION ELECTRON-MICROSCOPY (REM) OF FCC METALS
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COWLEY, JM
[J]. ULTRAMICROSCOPY, 1983, 11 (04) : 239 - 250
[7] OSAKABE N, 1981, SURF SCI, V102, P424, DOI 10.1016/0039-6028(81)90038-8
[8] REFLECTION ELECTRON-MICROSCOPY OF CLEAN AND GOLD DEPOSITED (111) SILICON SURFACES
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TANISHIRO, Y
YAGI, K
HONJO, G
[J]. SURFACE SCIENCE, 1980, 97 (2-3) : 393 - 408
[9] PETROFF PM, 1984, MATERIAL RES S P, V31, P117
[10] DIRECT OBSERVATION OF ALXGA1-XAS/GAAS SUPERLATTICES BY REM
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L806 - L808