NULLING OPTICAL BRIDGE FOR NONINTRUSIVE TEMPERATURE-MEASUREMENTS

被引:5
作者
GUIDOTTI, D [1 ]
WILMAN, JG [1 ]
机构
[1] IBM CORP,HOPEWELL JCT,NY 12533
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 05期
关键词
D O I
10.1116/1.577841
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A null-point optical bridge for determining the relative power of two optical beams, derived from a common source, within the shot noise limit of the detector, independent of power fluctuations of the source has been developed. The optical bridge method can be used to measure very small changes in sample reflectivity caused by changes in sample temperature and can, therefore, be used as a nonintrusive optical thermometer for semiconductor substrates during processing. The range of application extends from very low temperatures to very high temperature where, for example, the sample may melt. For silicon and under ideal laboratory conditions, a temperature resolution of 0.2-degrees-C has been demonstrated.
引用
收藏
页码:3184 / 3192
页数:9
相关论文
共 25 条
[1]   MONITORING PERMANENT-MAGNET MOTOR HEATING WITH PHOSPHOR THERMOMETRY [J].
ALLISON, SW ;
CATES, MR ;
NOEL, BW ;
GILLIES, GT .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1988, 37 (04) :637-641
[2]  
BATZ B, 1972, SEMICONDUCT SEMIMET, V9, P315
[3]   TEMPERATURE-MEASUREMENTS OF GLASS SUBSTRATES DURING PLASMA-ETCHING [J].
BOND, RA ;
DZIOBA, S ;
NAGUIB, HM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :335-338
[4]  
Borghesi A., 1988, SOLID SATE PHENOM, V1, P1
[5]  
Born M., 1964, PRINCIPLES OPTICS
[6]  
CARDONA M, 1969, SOLID STATE PHYS S, V11, P117
[7]   ANALYSIS OF REFLECTIVITY SPECTRA OF SILICON IMPLANTED WITH 70 KEV B, SI, AND AG IONS [J].
CZARNECKASUCH, E ;
KISIEL, A .
SURFACE SCIENCE, 1988, 193 (1-2) :221-234
[8]   A 4-PHASE COMPLEX REFRACTIVE-INDEX MODEL OF ION-IMPLANTATION DAMAGE - OPTICAL-CONSTANTS OF PHOSPHORUS IMPLANTS IN SILICON [J].
DELFINO, M ;
RAZOUK, RR .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :386-392
[9]   CHANGES OF OPTICAL REFLECTIVITY (1.8-EVTO2.2-EV) INDUCED BY 40-KEV ANTIMONY ION BOMBARDMENT OF SILICON [J].
HART, RR ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1969, 14 (07) :225-&
[10]   ION-IMPLANTATION DAMAGE AND ANNEALING OF SILICON AS CHARACTERIZED BY DIFFERENTIAL REFLECTOMETRY [J].
HUMMEL, RE ;
XI, W ;
HAGMANN, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) :3583-3588