NARROW BANDWIDTH LONG-WAVELENGTH RESONANT-CAVITY PHOTODIODES

被引：12

作者：

CORBETT, B

CONSIDINE, L

WALSH, S

KELLY, WM

机构：

[1] National Microelectronics Research Centre, University College, Lee Maltings, Prospect Row, Cork

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 24期

关键词：

PHOTODIODES; LASER CAVITY RESONATORS;

D O I：

10.1049/el:19931436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant cavity photodetectors at 1.53mum are demonstrated using the epitaxial liftoff technique to position an epilayer structure between two metallic mirrors. The epilayer consists of a pin structure with quantum wells placed strategically at the antinodes of the fabricated cavity. The quality factor of the 1.16mum long cavity is 59 corresponding to mirror reflectivies of 94 and 90%.

引用

页码：2148 / 2149

页数：2

共 8 条

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[J]. ELECTRONICS LETTERS, 1993, 29 (11) : 1019 - 1021

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