IN0.47GA0.53AS-INP HETEROSTRUCTURES FOR VERTICAL CAVITY SURFACE EMITTING LASERS AT 1.65 MU-M WAVELENGTH

被引：6

作者：

DUPUIS, RD

DEPPE, DG

PINZONE, CJ

GERRARD, ND

SINGH, S

ZYDZIK, GJ

VANDERZIEL, JP

GREEN, CA

机构：

[1] STC DEF SYST,PAIGNTON TQ4 7BE,DEVON,ENGLAND

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90559-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The vertical cavity surface emitting laser is of growing interest because of unique advantages offered by the device geometry, including the potential for the integration of this laser structure with other devices for OEICs. Additional advantages include the potential for ultra-small active volume devices, light emission normal to the wafer surface, and large-area two-dimensional arrays. In this paper we present data on various heterostructures grown by metalorganic chemical vapor deposition directed towards the realization of a high-efficiency VCSEL in the lattice-matched InP-In0.47Ga0.53As system.

引用

页码：790 / 795

页数：6

共 16 条

[1]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH2

[2]

BORN M, 1959, PRINCIPLES OPTICS, pCH1

[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].