ELECTRONIC-STRUCTURE OF AMORPHOUS SI3N4 IN THE CLUSTER-BETHE-LATTICE APPROXIMATION

被引：17

作者：

FERREIRA, EC

DASILVA, CETG

机构：

[1] ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75231 PARIS 05,FRANCE

[2] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13100 CAMPINAS,SP,BRAZIL

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.32.8332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8332 / 8337

页数：6

共 13 条

[1] X-RAY-DIFFRACTION STUDY OF THE AMORPHOUS STRUCTURE OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE
AIYAMA, T
FUKUNAGA, T
NIIHARA, K
HIRAI, T
SUZUKI, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 33 (02) : 131 - 139
[2] PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS
ALVAREZ, F
CHAMBOULEYRON, I
[J]. SOLAR ENERGY MATERIALS, 1984, 10 (02): : 151 - 170
[3] OPTICAL-PROPERTIES, BAND-GAP, AND SURFACE-ROUGHNESS OF SI3N4
BAUER, J
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (02): : 411 - 418
[4] Joannopoulos J., 1976, SOLID STATE PHYS, V31, P71
[5] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY
KARCHER, R
LEY, L
JOHNSON, RL
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910
[6] BULK ELECTRONIC-STRUCTURE OF SIO2
LAUGHLIN, RB
JOANNOPOULOS, JD
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5228 - 5237
[7] LOCALIZED STATES AT THE CONDUCTION-BAND EDGE OF AMORPHOUS-SILICON NITRIDE DETECTED BY RESONANCE PHOTOEMISSION
LEY, L
KARCHER, R
JOHNSON, RL
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (07) : 710 - 713
[8] STRUCTURE CHARACTERIZATION OF CVD AMORPHOUS SI3N4 BY PULSED NEUTRON TOTAL SCATTERING
MISAWA, M
FUKUNAGA, T
NIIHARA, K
HIRAI, T
SUZUKI, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (03) : 313 - 321
[9] PREPARATION, CHARACTERIZATION AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS
MOROSANU, CE
[J]. THIN SOLID FILMS, 1980, 65 (02) : 171 - 208
[10] ELECTRONIC-STRUCTURES OF BETA-SILICON AND ALPHA-SILICON NITRIDE
REN, SY
CHING, WY
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5454 - 5463

← 1 2 →