STRUCTURE AND MECHANICAL-PROPERTIES OF RF SPUTTERED SIC FILMS

被引：43

作者：

WASA, K ^{[1
]}

NAGAI, T ^{[1
]}

HAYAKAWA, S ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,WIRELESS RES LAB,KADOMA,OSAKA,JAPAN

来源：

THIN SOLID FILMS | 1976年 / 31卷 / 03期

关键词：

D O I：

10.1016/0040-6090(76)90370-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 241

页数：7

共 8 条

[1]

AKIMCHEN.IP, 1972, SOV PHYS SEMICOND+, V6, P1039

[2] MASS-SPECTROMETRIC STUDY OF SPUTTERING OF SINGLE CRYSTALS OF GAAS BY LOW-ENERGY A IONS [J].

COMAS, J ;

COOPER, CB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2956-&

[3] GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON [J].

KHAN, IH ;

SUMMERGRAD, RN .

APPLIED PHYSICS LETTERS, 1967, 11 (01) :12-+

[4] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION [J].

LEARN, AJ ;

HAQ, KE .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :26-&

[5] FORMATION OF 2H-TYPE SIC FILMS BY REACTIVE SPUTTERING [J].

MATSUMOTO, S ;

SUZUKI, H ;

UEDA, R .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) :607-+

[6] EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J].

NAKASHIMA, H ;

SUGANO, T ;

YANAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) :874-+

[7] ENERGY DISTRIBUTION OF SPUTTERED CU ATOMS [J].

STUART, RV ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1819-&

[8]

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