LARGE PHOTOINDUCED PERSISTENT OPTICAL-ABSORPTION IN SELENIUM DOPED ALSB

被引:15
作者
BECLA, P
WITT, A
LAGOWSKI, J
WALUKIEWICZ, W
机构
[1] UNIV S FLORIDA,CTR MICROELECTR RES,TAMPA,FL 33620
[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,CTR ADV MAT,DIV MAT SCI,BERKELEY,CA 94720
关键词
D O I
10.1063/1.114640
中图分类号
O59 [应用物理学];
学科分类号
摘要
Low-temperature, T<90 K, illumination transfers transparent, single crystals of AlSb doped with Se to a metastable state characterized by a high optical absorption approaching 200 cm(-1) The enhanced absorption spectrum extends from 0.1 to 1.5 eV and consists of a double band structure with peaks at 0.2 and 0.5 eV. It is induced by photons with a threshold energy of about 1 eV. It is persistent, i.e., it shows no measurable decay after switching off the excitation. The low absorption state is thermally recovered at 100 K. The persistent absorption is a manifestation of a DX-type bi-stability of the Se donor. The 0.2 and 0.5 bands are, respectively, due to the photoionization of electrons from the metastable hydrogenic donor level to X(1) and X(3) conduction band minima. A large binding energy of the Se donor is essential for the observation of persistent absorption and a lack of any free-electron related effects. (C) 1995 American Institute of Physics.
引用
收藏
页码:395 / 397
页数:3
相关论文
共 16 条
[1]   METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190
[2]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[3]   ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS AND THE PROPERTIES OF EL2 [J].
DABROWSKI, J ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1989, 40 (15) :10391-10401
[4]   LARGE-LATTICE-RELAXATION VERSUS SMALL-LATTICE-RELAXATION MODELS OF THE DX CENTERS IN GA1-XALXAS [J].
DMOCHOWSKI, JE ;
LANGER, JM ;
RACZYNSKA, J ;
JANTSCH, W .
PHYSICAL REVIEW B, 1988, 38 (05) :3276-3279
[5]   BISTABILITY OF THE TE DONOR IN ALSB-TE BULK CRYSTALS [J].
JOST, W ;
KUNZER, M ;
KAUFMANN, U ;
BENDER, H .
PHYSICAL REVIEW B, 1994, 50 (07) :4341-4344
[6]  
KOHN W, 1965, PHYS REV, V98, P915
[7]   DIFFRACTION FROM OPTICALLY WRITTEN PERSISTENT PLASMA GRATINGS IN DOPED COMPOUND SEMICONDUCTORS [J].
LINKE, RA ;
THIO, T ;
CHADI, JD ;
DEVLIN, GE .
APPLIED PHYSICS LETTERS, 1994, 65 (01) :16-18
[8]   DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS [J].
MOONEY, PM .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :R1-R26
[9]   DEEP LEVEL PHOTODIFFRACTIVE SPECTROSCOPY OF SEMICONDUCTORS [J].
NOLTE, DD ;
OLSON, DH ;
GLASS, AM .
APPLIED PHYSICS LETTERS, 1990, 56 (02) :163-165
[10]  
THEIS TN, 1984, I PHYS C SER, V74, P241