BISTABILITY OF THE TE DONOR IN ALSB-TE BULK CRYSTALS

被引：11

作者：

JOST, W ^{[1
]}

KUNZER, M ^{[1
]}

KAUFMANN, U ^{[1
]}

BENDER, H ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.50.4341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoenhanced electron-paramagnetic-resonance (EPR) and contactless photoconductivity measurements on Te-doped AlSb bulk crystals are reported. Low-temperature annealing studies of both photo-EPR and persistent photoconductivity strongly support a bistable DX-type model for the Te donor in AlSb and provide information on the deep DX-type state of Te.

引用

页码：4341 / 4344

页数：4

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