MILLIMETER-WAVE PULSED IMPATT DIODE OSCILLATORS

被引：4

作者：

YING, RS

ENGLISH, DL

WELLER, KP

NAKAJI, EM

LEE, DH

BERNICK, RL

机构：

[1] HUGHES AIRCRAFT CO,CTR RES,RES LABS,TECH STAFF,TORRANCE,CA

[2] HUGHES AIRCRAFT CO,CTR RES,IND ELECTR GRP,TECH STAFF,TORRANCE,CA

[3] HUGHES AIRCRAFT CO,CTR RES,TORRANCE,CA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 02期

关键词：

D O I：

10.1109/JSSC.1976.1050715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：279 / 285

页数：7

共 10 条

[1] FREQUENCY SCALING OF IMPATT DIODES [J].

BLUM, FA ;

KRAMER, NB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (11) :983-+

[2] MILLIMETER-WAVE OSCILLATIONS FROM AVALANCHING P-N JUNCTIONS IN SILICON [J].

BURRUS, CA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1256-&

[3] HIGH POWER PULSED AVALANCHE DIODE OSCILLATORS FOR MICROWAVE FREQUENCIES [J].

GILDEN, M ;

MORONEY, W .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1227-&

[4]

KENYON ND, 1970, INT MICROWAVE S DIG, P300

[5]

LEE DH, 1974, 4TH INT C ION IMPL S

[6] NONLINEAR ANALYSIS OF AVALANCHE TRANSIT-TIME OSCILLATOR [J].

MOUTHAAN, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) :935-+

[7]

PFUND G, 1974, MAR MILL WAV TECHN C

[8] DOUBLE-DRIFT-REGION ION-IMPLANTED MILLIMETER-WAVE IMPATT DIODES [J].

SEIDEL, TE ;

DAVIS, RE ;

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1222-+

[9] MULTILAYER EPITAXIALLY GROWN SILICON IMPATT DIODES AT MILLIMETER-WAVE FREQUENCIES [J].

WEN, CP ;

CHIANG, YS ;

DENLINGER, EJ .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :119-129

[10] X-BAND SILICON DOUBLE-DRIFT IMPATT DIODES USING MULTIPLE EPITAXY [J].

YING, RS .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1104-&

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