AES AND LEED STUDY OF ACTIVATION OF GAAS-CS-O NEGATIVE ELECTRON AFFINITY SURFACES

被引:89
作者
STOCKER, BJ [1 ]
机构
[1] MULLARD RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
关键词
D O I
10.1016/0039-6028(75)90197-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:501 / 513
页数:13
相关论文
共 22 条
[11]   EFFECTS OF HEAT CLEANING ON PHOTOEMISSION PROPERTIES OF GAAS SURFACES [J].
LIU, YZ ;
MOLL, JL ;
SPICER, WE .
APPLIED PHYSICS LETTERS, 1969, 14 (09) :275-&
[12]  
MACRAE AU, 1964, J APPL PHYS, V35, P1629
[13]  
MACRAE AU, 1966, SURF SCI, V4, P247
[14]  
Mityagin A. Yu., 1973, Soviet Physics - Solid State, V14, P1623
[15]   GaAs-Cs: A NEW TYPE OF PHOTOEMITTER [J].
Scheer, J. J. ;
van Laar, J. .
SOLID STATE COMMUNICATIONS, 1965, 3 (08) :189-193
[16]   ADSORPTION KINETICS OF CS ON GAAS [J].
SMITH, DL ;
HUCHITAL, DA .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2624-&
[17]   CESIUM-OXYGEN ACTIVATION OF 3-5 COMPOUND PHOTOEMITTERS [J].
SOMMER, AH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2158-&
[18]   THICKNESS OF CS AND CS-O FILMS ON GAAS(CS) AND GAAS(CS-O) PHOTOCATHODES [J].
SOMMER, AH ;
WHITAKER, HH ;
WILLIAMS, BF .
APPLIED PHYSICS LETTERS, 1970, 17 (07) :273-&
[19]   LONG-WAVELENGTH PHOTOEMISSION FROM INAS1-XPX [J].
SONNENBERG, H .
APPLIED PHYSICS LETTERS, 1971, 19 (10) :431-+
[20]   PHOTOEMISSION FROM GAAS-CS-O [J].
TURNBULL, AA ;
EVANS, GB .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) :155-&