RELIABILITY PROBLEMS WITH VLSI

被引：10

作者：

FANTINI, F

机构：

来源：

MICROELECTRONICS RELIABILITY | 1984年 / 24卷 / 02期

关键词：

D O I：

10.1016/0026-2714(84)90452-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：275 / 296

页数：22

共 218 条

[1] HOT-CARRIER INSTABILITY IN IGFETS [J].

ABBAS, SA ;

DOCKERTY, RC .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :147-148

[2]

ADAMS AC, 1980, ELECTROCHEM SOC, V127, P1787

[3] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J].

AGARWALA, BN ;

ATTARDO, MJ ;

INGRAHAM, AP .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3954-&

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS [J].

AITKEN, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :372-379

[5] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].

AITKEN, JM ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198

[6] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].

AMES, I ;

DHEURLE, FM ;

HORSTMANN, RE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :461-+

[7]

ANOLICK ES, 1981, IEEE AN P RELIAB PHY, V19, P23

[8]

ANOLICK ES, 1982, IEEE AN P RELIAB PHY, V20, P238

[9]

ANOLICK ES, 1979, IEEE AN P RELIAB PHY, V17, P8

[10]

AUTRAN J, 1974, FIABILITE ANAL DEFAI

← 1 2 3 4 5 6 7 8 9 10 →