RELIABILITY PROBLEMS WITH VLSI

被引:10
作者
FANTINI, F
机构
关键词
D O I
10.1016/0026-2714(84)90452-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:275 / 296
页数:22
相关论文
共 218 条
[91]   TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SIO2-FILMS [J].
HIRAYAMA, M ;
ASAI, S ;
MATSUMOTO, H ;
SAWADA, K ;
NAGASAWA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L329-L332
[93]  
HO PS, 1982, IEEE AN P RELIAB PHY, V20, P288
[94]  
HOKARI Y, 1982, INT ELECTRON DEV M, V28, P46
[95]   ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION [J].
HOSACK, HH .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3476-3485
[96]   INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES [J].
HOWARD, JK ;
WHITE, JF ;
HO, PS .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4083-4093
[97]  
Howes M.J, 1981, RELIABILITY DEGRADAT
[99]  
JOHNSON GM, 1977, IEEE AN P RELIAB PHY, V15, P179
[100]  
JONES WK, 1974, IEEE AN P RELIAB PHY, V12, P43