DIRECT AND FAST COMPARISON OF NEAR-INFRARED ABSORPTION AND PHOTOLUMINESCENCE TOPOGRAPHY OF SEMIINSULATING GAAS WAFERS

被引：26

作者：

WETTLING, W

WINDSCHEIF, J

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 40卷 / 03期

关键词：

D O I：

10.1007/BF00617403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：191 / 195

页数：5

共 18 条

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