GRAIN-BOUNDARY TRAP DISTRIBUTION IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS

被引:31
作者
DIMITRIADIS, CA
机构
[1] Department of Physics, Solid State Section, University of Thessaloniki
关键词
D O I
10.1063/1.352836
中图分类号
O59 [应用物理学];
学科分类号
摘要
The grain boundary trap state density is evaluated in polysilicon thin-film transistors by a method based on the dependence of the grain boundary potential barrier height on the gate voltage. Assuming a Gaussian energy distribution of the grain boundary trap states, the distribution parameters are determined by fitting the grain boundary barrier height experimental data with the theory. In low-pressure chemical vapor deposited polysilicon films, the influence of deposition pressure on the grain boundary trap distribution is examined by using this method. A large number of traps exist at the grain boundaries near the midgap of the material deposited at lower pressure due probably to an increased impurity contamination.
引用
收藏
页码:4086 / 4088
页数:3
相关论文
共 9 条
  • [1] BACARANI G, 1978, J APPL PHYS, V49, P5565
  • [2] PERFORMANCE OF THIN-FILM TRANSISTORS ON POLYSILICON FILMS GROWN BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT VARIOUS PRESSURES
    DIMITRIADIS, CA
    COXON, PA
    DOZSA, L
    PAPADIMITRIOU, L
    ECONOMOU, N
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) : 598 - 606
  • [3] DIMITRIADIS CA, 1991, APPL PHYS LETT, V52, P172
  • [4] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS
    LEVINSON, J
    SHEPHERD, FR
    SCANLON, PJ
    WESTWOOD, WD
    ESTE, G
    RIDER, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1193 - 1202
  • [5] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES
    MEAD, CA
    SPITZER, WG
    [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A713 - +
  • [6] Miyasaka M., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P559, DOI 10.1109/IEDM.1991.235408
  • [7] LOW-TEMPERATURE OPERATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    MORI, H
    HATA, K
    HASHIMOTO, T
    WU, IW
    LEWIS, AG
    KOYANAGI, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3710 - 3714
  • [8] PHENOMENOLOGICAL MODEL OF GRAIN-BOUNDARY TRAPPING STATES IN POLYCRYSTALLINE SILICON UNDER OPTICAL ILLUMINATION
    POON, E
    HWANG, W
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 699 - 705
  • [9] EFFECTS OF THE PRESENCE ABSENCE OF HCL DURING ATE OXIDATION ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    PROANO, RE
    AST, DG
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 2189 - 2199