OPTICAL-EXCITATION OF DEFECTS IN MOLECULAR-BEAM EPITAXY GROWN GAAS WITH POLARIZED-LIGHT

被引：1

作者：

BLOOD, P

GRASSIE, ADC

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.27.2548

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2548 / 2550

页数：3

共 8 条

[1]

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[7] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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