THE GROWTH AND CHARACTERIZATION OF ALXGA1-XAS/GE HETEROSTRUCTURES

被引：2

作者：

CHOI, SW ^{[1
]}

BACHMANN, KJ ^{[1
]}

TIMMONS, ML ^{[1
]}

COLPITTS, TS ^{[1
]}

POSTHILL, JB ^{[1
]}

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 01期

关键词：

D O I：

10.1149/1.2069191

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The fabrication of AlxGa1-xAs/Ge tandem solar cells requires a trade-off in the deposition of the AlxGa1-xAs active layer between low-growth temperature for minimum interdiffusion and high-growth temperature for maximum crystalline perfection. In this paper, we report the results of double crystal x-ray rocking curve measurements, electron beam induced current, cross-sectional transmission electron microscopy, Raman spectroscopy, secondary-ion mass spectrometry, and of steady-state and time-resolved photoluminescence for Al0.85Ga0.15As/Al0.08Ga0.92As/Ge heterostructures grown by metallorganic chemical vapor deposition in the temperature range 660-degrees-C less-than-or-equal-to T(G) less-than-or-equal-to 780-degrees-C. The highest minority carrier lifetime, 2.41 ns, is obtained for T(G) = 780-degrees-C, but the lowest interfacial recombination velocity, 1.6 x 10(4) cm/s, is obtained at 660-degrees-C.

引用

页码：312 / 316

页数：5

共 13 条

[1] RECOMBINATION VELOCITY OF THE GA0.5IN0.5P/GAAS INTERFACE [J].