GROWTH AND CHARACTERIZATION OF GAAS/GE EPILAYERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：69

作者：

SHELDON, P

YACOBI, BG

JONES, KM

DUNLAVY, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4186 / 4193

页数：8

共 32 条

[1]

AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[3] PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP [J].

BOHM, K ;

FISCHER, B .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5453-5460

[4] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

BRAVMAN, JC ;

SINCLAIR, R .

JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61

[5] INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY [J].

CHANG, CA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1253-1255

[6] MOLECULAR-BEAM EPITAXY OF GE-GAAS SUPER-LATTICES [J].

CHANG, CA ;

CHU, WK ;

MENDEZ, EE ;

CHANG, LL ;

ESAKI, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :567-570

[7] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J].

CHOI, HK ;

TSAUR, BY ;

METZE, GM ;

TURNER, GW ;

FAN, JCC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :207-208

[8] EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS [J].

ETTENBERG, M .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :901-906

[9] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

HENDERSON, T ;

MCGLINN, TC ;

KLEIN, MV ;

MORKOC, H ;

MAZUR, JH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381

[10] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J].

FLETCHER, RM ;

WAGNER, DK ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :967-969

← 1 2 3 4 →