OPTICAL EVALUATION OF AN ALAS/ALGAAS VISIBLE BRAGG REFLECTOR GROWN BY CHEMICAL BEAM EPITAXY

被引：9

作者：

ARMSTRONG, JV

FARRELL, T

BOYD, A

BEANLAND, R

机构：

[1] Department of Materials Science and Engineering, University of Liverpool

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 23期

关键词：

D O I：

10.1063/1.108085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 21 layer AlAs/Al0.4Ga0.6As multilayer structure, designed as a Bragg reflector centered at 670 nm, has been grown by chemical beam epitaxy. The growth was monitored in real time by dynamic optical reflectivity (DOR) using a 670 nm semiconductor diode laser. The resultant DOR trace was compared to a computer simulation for the growth structure and good agreement is obtained using layer thicknesses measured by transmission electron microscopy. The wavelength dependent reflectivity of the Bragg reflector was measured using a grating spectrometer and good agreement is obtained to a computer simulation once the dispersive complex refractive index is taken into account.

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页码：2770 / 2772

页数：3

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