ZEEMAN SPECTROSCOPY OF THE DEFECT-INDUCED BOUND-EXCITON LINES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

SKOLNICK, MS

HALLIDAY, DP

TU, CW

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.38.4165

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4165 / 4179

页数：15

共 36 条

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