ENHANCED CONDUCTIVITY AND BREAKDOWN OF OXIDES GROWN ON HEAVILY IMPLANTED SUBSTRATES

被引：8

作者：

HEGARTY, CJ ^{[1
]}

LEE, JC ^{[1
]}

HU, CM ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT ENGN & COMP SCI,AUSTIN,TX 78712

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 11期

关键词：

D O I：

10.1016/0038-1101(91)90059-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The enhanced conductivity exhibited by oxides on heavily-doped Si substrates is studied using substrates implanted with P, As and Si in the range 10(15)-10(16) cm-2 with gate oxides formed by thermal oxidation and CVD. Studies of light emission photographs, TEM, I-V and breakdown characteristics suggest that the primary cause of enhanced conduction is thinning of the oxide at the field edge.

引用

页码：1207 / 1213

页数：7

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