ENHANCED CONDUCTIVITY AND BREAKDOWN OF OXIDES GROWN ON HEAVILY IMPLANTED SUBSTRATES

被引:8
作者
HEGARTY, CJ [1 ]
LEE, JC [1 ]
HU, CM [1 ]
机构
[1] UNIV TEXAS,DEPT ELECT ENGN & COMP SCI,AUSTIN,TX 78712
关键词
D O I
10.1016/0038-1101(91)90059-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The enhanced conductivity exhibited by oxides on heavily-doped Si substrates is studied using substrates implanted with P, As and Si in the range 10(15)-10(16) cm-2 with gate oxides formed by thermal oxidation and CVD. Studies of light emission photographs, TEM, I-V and breakdown characteristics suggest that the primary cause of enhanced conduction is thinning of the oxide at the field edge.
引用
收藏
页码:1207 / 1213
页数:7
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