SURFACE ALTERATION OF AMORPHOUS SI3N4 FILMS BY ARF EXCIMER-LASER IRRADIATION

被引：9

作者：

NAKAMAE, K

KUROSAWA, K

TAKIGAWA, Y

SASAKI, W

IZAWA, Y

OKUDA, M

机构：

[1] UNIV OSAKA PREFECTURE, SAKAI, OSAKA 593, JAPAN

[2] MIYAZAKI UNIV, MIYAZAKI 88921, JAPAN

[3] OSAKA ELECTROCOMMUN UNIV, NEYAGAWA, OSAKA 572, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期

关键词：

AMORPHOUS SI3N4 FILM; ARF EXCIMER LASER IRRADIATION; SILICON PRECIPITATION; NITROGEN DESORPTION; CRITICAL FLUENCE;

D O I：

10.1143/JJAP.34.L1482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ArF excimer laser induces silicon precipitation accompanied by nitrogen desorption on the surface of an amorphorus Si3N4 film, when the laser fluence exceeds the critical fluence which is about 0.2 J/cm(2). The amount of nitrogen desorption and the silicon precipitation of the amorphous Si3N4 film increases with increasing laser fluence. The depth of the silicon precipitation on the amorphous Si3N4 film increases exponentially with increasing laser fluence.

引用

页码：L1482 / L1485

页数：4

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