SILICON VARIABLE CAPACITANCE DIODES WITH HIGH VOLTAGE SENSITIVITY BY LOW TEMPERATURE EPITAXIAL GROWTH

被引：37

作者：

NAKANUMA, S

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1966.15738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：578 / +

页数：1

共 26 条

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