BURIED-CHANNEL GAAS-MESFETS WITH IMMUNITY TO IONIZING OPTICAL RADIATION EFFECTS

被引：4

作者：

CANFIELD, PC

FORBES, L

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 03期

关键词：

D O I：

10.1109/EDL.1987.26570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：113 / 115

页数：3

共 9 条

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[2]

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[4]

CANFIELD P, 1986, 4TH P C SEM 3 5 MAT, P573

[5] BURIED-CHANNEL GAAS-MESFETS WITH FREQUENCY-INDEPENDENT OUTPUT CONDUCTANCE [J].

CANFIELD, PC ;

MEDINGER, J ;

FORBES, L .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) :88-89

[6] SUPRESSION OF DRAIN CONDUCTANCE TRANSIENTS, DRAIN CURRENT OSCILLATIONS, AND LOW-FREQUENCY GENERATION RECOMBINATION NOISE IN GAAS-FETS USING BURIED CHANNELS [J].

CANFIELD, PC ;

FORBES, L .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :925-928

[7] TRANSIENT RADIATION EFFECTS IN GAAS DEVICES - BULK CONDUCTION AND CHANNEL MODULATION PHENOMENA IN D-MESFET, E-JFET, AND N+-SI-N+ STRUCTURES [J].

FLESNER, LD .

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[8] RADIATION EFFECTS IN GAAS JUNCTION FIELD-EFFECT TRANSISTORS [J].

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[9] CHANNEL AND SUBSTRATE CURRENTS IN GAAS-FETS DUE TO IONIZING-RADIATION [J].

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TROEGER, GL .

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