LOW-TEMPERATURE FORMATION OF TEXTURED ZNO TRANSPARENT ELECTRODES BY MAGNETRON SPUTTERING

被引:16
作者
MINAMI, T
SONOHARA, H
TAKATA, S
FUKUDA, I
机构
[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Nonoichi
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期
关键词
D O I
10.1116/1.579584
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This article describes a high pressure magnetron sputtering technique that results in milky transparent conducting Al-doped ZnO (ZnO:Al) films with a textured surface prepared on substrates at a temperature of 200 °C. Large-area milky transparent conducting ZnO:Al films with a uniform spatial resistivity distribution on the substrate were prepared at a sputter pressure of 60–80 Pa by direct current magnetron sputtering. A total transmittance of 72% and a haze factor of 54% at a wavelength of 550 nm as well as a sheet resistance as low as 16 Ω/sq wereobtained in milky ZnO:Al films of about 1000 nm thick prepared at a sputter pressure of 80 Pa. In addition, a two step deposition that realizes a high deposition rate and a low sheet resistance was demonstrated. A 1350-nm-thick milky ZnO:Alfilm with a sheet resistance of 4 H/sq and a haze ratio of 13% at a wavelength of 550 nm was prepared that had about a five times greater deposition rate than that observed at a high sputter pressure of 80 Pa. © 1995, American Vacuum Society. All rights reserved.
引用
收藏
页码:1053 / 1057
页数:5
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