MICROWAVE PERFORMANCE OF A SELF-ALIGNED GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：41

作者：

LIU, W ^{[1
]}

FAN, SK ^{[1
]}

HENDERSON, T ^{[1
]}

DAVITO, D ^{[1
]}

机构：

[1] EPITRON CORP,PHOENIX,AZ 85027

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 04期

关键词：

D O I：

10.1109/55.215159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor (HBT) is presented. At an operating current density of 2.08 x 10(4) A/cm2, the measured cutoff frequency is 50 GHz, and the maximum oscillation frequency extrapolated from measured unilateral gain and the maximum available gain are 116 and 81 GHz, respectively, all using 20-dB/decade slopes. To the author's knowledge, these represent the highest reported values of HBT's based on the GaInP/GaAs material system. These results are compared with other reported high-frequency performance of GaInP HBT's. In addition, these results are compared with AlGaAs/GaAs HBT's having a similar device structure.

引用

页码：176 / 178

页数：3

共 18 条

[11] AN ADVANTAGE OF PNP OVER NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATIONS [J].