AN ADVANTAGE OF PNP OVER NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATIONS

被引：8

作者：

LIU, W

DAI, CH

机构：

[1] Solid State Laboratory, Stanford University, CA, 94305, McCullough Bldg

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 4B期

关键词：

HBT; MICROWAVE POWER; EMITTER CROWDING;

D O I：

10.1143/JJAP.31.L452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter demonstrates that the emitter crowding effects are much more dramatic for typical Npn HBTs compared to PnP HBTs. Hence, the design of emitter width in Pnp HBTs is much more flexible and this advantage is shown to favor Pnp HBTs for millimeter-wave power applications.

引用

收藏

页码：L452 / L454

页数：3

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