STRESS RELIEF IN HEAVILY DOPED SILICON LAYERS

被引：12

作者：

MOSER, F ^{[1
]}

BESERMAN, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1033 / 1036

页数：4

共 16 条

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