ROLE OF SULFUR-ATOMS IN MICROWAVE PLASMA-ETCHING OF SILICON

被引：39

作者：

NINOMIYA, K

SUZUKI, K

NISHIMATSU, S

OKADA, O

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1459 / 1468

页数：10

共 28 条

[1] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J].

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2614-2619

[2] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[3]

COBURN JW, 1979, SOLID STATE TECHNOL, V22, P117

[4] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].

COBURN, JW ;

CHEN, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136

[5] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J].

DAGOSTINO, R ;

FLAMM, DL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :162-167

[6] COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON [J].

EDELSON, D ;

FLAMM, DL .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) :1522-1531

[7] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J].

EISELE, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :123-126

[8]

FLAMM DL, 1979, SOLID STATE TECHNOL, V22, P109

[9] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].

FLAMM, DL ;

DONNELLY, VM ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30

[10]

HOLLINGER G, 1977, 7TH P INT VAC C 3RD, P2229

← 1 2 3 →