EFFECTS OF ELECTRON-BEAM IRRADIATION ON PROPERTIES OF CVD SI-3N-4 FILMS IN MNOS STRUCTURES

被引：16

作者：

MA, TP

YUN, BH

DIMARIA, DJ

SCOGGAN, GA

机构：

[1] IBM CORP THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 04期

关键词：

D O I：

10.1063/1.322777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1599 / 1604

页数：6

共 31 条

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[6] EFFECTS ON INTERFACE BARRIER ENERGIES OF METAL-ALUMINUM OXIDE-SEMICONDUCTOR (MAS) STRUCTURES AS A FUNCTION OF METAL ELECTRODE MATERIAL, CHARGE TRAPPING, AND ANNEALING [J].

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[7]

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[8]

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