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C-V ANALYSIS OF THE SCHOTTKY-BARRIER IN SEMI-INSULATING SEMICONDUCTORS

被引：9
作者：
DUBECKY, F
OLEJNIOVA, B
机构：
[1] Institute of Electrical Engineering, Slovak Academy of Sciences, CS-842 39 Bratislava
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 03期
关键词：
D O I：
10.1063/1.347228
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We analyze the screening length and the base series admittance effect on the measurement of the barrier capacitance and voltage in semi-insulating (SI) semiconductors. Specific experimental conditions are summarized which enable the utilization of C-V analysis in SI materials. It is shown that under such experimental conditions the formula of Sah and Reddi for low-frequency C-V dependence can be applied for the calculation of the concentration of residual shallow impurities. These considerations are applied for the low-frequency C-V analysis of the Schottky barrier in SI GaAs:Cr formed by Au contact and the concentration of residual shallow donors is determined. Some limitations of the presented C-V analysis are discussed.
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页码：1769 / 1771
页数：3
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