SCANNING-TUNNELING-MICROSCOPY OF (NH4)2SX-TREATED GAAS-SURFACES ANNEALED IN VACUUM

被引：18

作者：

TANIMOTO, M

YOKOYAMA, H

SHINOHARA, M

INOUE, N

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 3A期

关键词：

(NH4)2SX-TREATMENT; SURFACE STRUCTURE; PASSIVATION; GAAS; ANNEALING IN VACUUM; SCANNING TUNNELING MICROSCOPY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;

D O I：

10.1143/JJAP.33.L279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic structure of (NH4)2Sx-treated and annealed GaAs surface is revealed using scanning tunneling microscopy (STM). STM image observation reveals that the GaAs surface is terminated with Ga-S bonds and that the monolayer sulfur forms dimers. Surface structural parameters such as S-S dimer bond length and Ga-S distance in the [100] direction are determined. STM measurements reveal that the surface is covered not only with an S monolayer but also with an S multilayer even with high-temperature annealing at 510-degrees-C.

引用

页码：L279 / L282

页数：4

共 21 条

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