SCANNING-TUNNELING-MICROSCOPY OF (NH4)2SX-TREATED GAAS-SURFACES ANNEALED IN VACUUM

被引：18

作者：

TANIMOTO, M

YOKOYAMA, H

SHINOHARA, M

INOUE, N

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 3A期

关键词：

(NH4)2SX-TREATMENT; SURFACE STRUCTURE; PASSIVATION; GAAS; ANNEALING IN VACUUM; SCANNING TUNNELING MICROSCOPY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;

D O I：

10.1143/JJAP.33.L279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The atomic structure of (NH4)2Sx-treated and annealed GaAs surface is revealed using scanning tunneling microscopy (STM). STM image observation reveals that the GaAs surface is terminated with Ga-S bonds and that the monolayer sulfur forms dimers. Surface structural parameters such as S-S dimer bond length and Ga-S distance in the [100] direction are determined. STM measurements reveal that the surface is covered not only with an S monolayer but also with an S multilayer even with high-temperature annealing at 510-degrees-C.

引用

页码：L279 / L282

页数：4

共 21 条

[11] UNIVERSAL PASSIVATION EFFECT OF (NH4)2SX TREATMENT ON THE SURFACE OF III-V COMPOUND SEMICONDUCTORS
OIGAWA, H
FAN, JF
NANNICHI, Y
SUGAHARA, H
OSHIMA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (3A): : L322 - L325
[12] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION
SANDROFF, CJ
NOTTENBURG, RN
BISCHOFF, JC
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 33 - 35
[13] ENHANCED ELECTRONIC-PROPERTIES OF GAAS-SURFACES CHEMICALLY PASSIVATED BY SELENIUM REACTIONS
SANDROFF, CJ
HEGDE, MS
FARROW, LA
BHAT, R
HARBISON, JP
CHANG, CC
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 586 - 588
[14] SURFACE-STRUCTURE OF SELENIUM-TREATED GAAS (001) STUDIED BY FIELD-ION SCANNING TUNNELING MICROSCOPY
SHIGEKAWA, H
HASHIZUME, T
OIGAWA, H
MOTAI, K
MERA, Y
NANNICHI, Y
SAKURAI, T
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (23) : 2986 - 2988
[15] VACUUM ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY OF (NH4)2S-TREATED GAAS (100) SURFACES
SPINDT, CJ
LIU, D
MIYANO, K
MEISSNER, PL
CHIANG, TT
KENDELEWICZ, T
LINDAU, I
SPICER, WE
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (09) : 861 - 863
[16] SYNCHROTRON RADIATION PHOTOEMISSION ANALYSIS FOR (NH4)2SX-TREATED GAAS
SUGAHARA, H
OSHIMA, M
OIGAWA, H
SHIGEKAWA, H
NANNICHI, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) : 4349 - 4353
[17] CHEMISTRY AND STRUCTURE OF GAAS-SURFACES CLEANED BY SULFUR ANNEALING
SUGAHARA, H
OSHIMA, M
OIGAWA, H
NANNICHI, Y
[J]. THIN SOLID FILMS, 1992, 220 (1-2) : 212 - 216
[18] TANIMOTO M, UNPUB
[19] THERMAL AND CHEMICAL-STABILITY OF SE-PASSIVATED GAAS-SURFACES
TURCO, FS
SANDROFF, CJ
HEDGE, MS
TAMARGO, MC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 856 - 859
[20] INFLUENCE OF S AND SE ON THE SCHOTTKY-BARRIER HEIGHT AND INTERFACE CHEMISTRY OF AU CONTACTS TO GAAS
WALDROP, JR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1197 - 1201

← 1 2 3 →