INVESTIGATION OF SHORT-TIME DONOR ANNIHILATION IN SILICON

被引:14
作者
OMARA, WC
PARKER, JE
BUTLER, P
GAT, A
机构
[1] NBK CORP,SANTA CLARA,CA 95051
[2] AG ASSOCIATES,PALO ALTO,CA 94043
关键词
D O I
10.1063/1.95665
中图分类号
O59 [应用物理学];
学科分类号
摘要
12
引用
收藏
页码:299 / 301
页数:3
相关论文
共 12 条
[1]   INCREASED OXYGEN PRECIPITATION IN CZ SILICON-WAFERS COVERED BY POLYSILICON [J].
ARST, MC ;
DEGROOT, JG .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) :763-778
[2]   EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS [J].
CAPPER, P ;
JONES, AW ;
WALLHOUSE, EJ ;
WILKES, JG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1646-1655
[3]  
FULLER CS, 1958, J APPL PHYS, V28, P1546
[4]  
Hahn S., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P85
[5]  
INOUE N, 1981, SEMICONDUCTOR SILICO, P282
[6]   ANNEALING BEHAVIOR OF THE OXYGEN DONOR IN SILICON [J].
KANAMORI, A .
APPLIED PHYSICS LETTERS, 1979, 34 (04) :287-289
[7]   DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].
MIKKELSEN, JC .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :336-337
[8]  
OMARA WC, 1983, DEFECTS SILICON, P120
[9]  
POLLARD CJ, 1983, MATER RES SOC S P, V13, P413
[10]  
SCHAAKE HF, 1981, SEMICONDUCTOR SILICO, P273