INVESTIGATION OF SHORT-TIME DONOR ANNIHILATION IN SILICON

被引：14

作者：

OMARA, WC

PARKER, JE

BUTLER, P

GAT, A

机构：

[1] NBK CORP,SANTA CLARA,CA 95051

[2] AG ASSOCIATES,PALO ALTO,CA 94043

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.95665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：299 / 301

页数：3

共 12 条

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ARST, MC ;

DEGROOT, JG .

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[2] EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS [J].

CAPPER, P ;

JONES, AW ;

WALLHOUSE, EJ ;

WILKES, JG .

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[3]

FULLER CS, 1958, J APPL PHYS, V28, P1546

[4]

Hahn S., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P85

[5]

INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[6] ANNEALING BEHAVIOR OF THE OXYGEN DONOR IN SILICON [J].

KANAMORI, A .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :287-289

[7] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :336-337

[8]

OMARA WC, 1983, DEFECTS SILICON, P120

[9]

POLLARD CJ, 1983, MATER RES SOC S P, V13, P413

[10]

SCHAAKE HF, 1981, SEMICONDUCTOR SILICO, P273

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