PROCESS DESIGN USING TWO-DIMENSIONAL PROCESS AND DEVICE SIMULATORS

被引：42

作者：

CHIN, D ^{[1
]}

KUMP, MR ^{[1
]}

LEE, HG ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,CUPERTINO IC OPERAT,CUPERTINO,CA 95014

来源：

关键词：

D O I：

10.1109/T-ED.1982.20704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：336 / 340

页数：5

共 18 条

[11] PENUMALLI BR, 1981, ISSCC, P212
[12] DISTRIBUTION OF IMPLANTED IONS UNDER ARBITRARILY SHAPED MASK EDGES
RUNGE, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (02): : 595 - 599
[13] SIMULATION OF DOPING PROCESSES
RYSSEL, H
HABERGER, K
HOFFMANN, K
PRINKE, G
DUMCKE, R
SACHS, A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1484 - 1492
[14] ARSENIC CLUSTERING IN SILICON
SCHWENKER, RO
PAN, ES
LEVER, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3195 - +
[15] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER
SELBERHERR, S
SCHUTZ, A
POTZL, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1540 - 1550
[16] SZE SM, 1969, PHYSICS SEMICONDUCTO
[17] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF IMPURITY REDISTRIBUTION IN VLSI PROCESSES
TIELERT, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1479 - 1483
[18] WARNER DD, 1980, AT&T TECH J, V59, P1