CORRELATION OF PHOTOLUMINESCENCE AND DEEP TRAPPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS(0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.40)

被引：37

作者：

BHATTACHARYA, PK

SUBRAMANIAN, S

机构：

[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

[2] VARIAN ASSOCIATES INC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3664 / 3668

页数：5

共 21 条

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[12] PHOTO-LUMINESCENCE INVESTIGATION OF RESIDUAL SHALLOW ACCEPTORS IN ALXGA1-X AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
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[13] MOHAMMED K, 1983, APPL PHYS LETT, V41, P103
[14] NEW PHOTO-LUMINESCENCE LINES IN GAAS-LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
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[15] IMPROVED PHOTO-LUMINESCENCE OF ORGANO-METALLIC VAPOR-PHASE EPITAXIAL ALGAAS USING A NEW GETTERING TECHNIQUE ON THE ARSINE SOURCE
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[16] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2212 - 2217
[17] INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE
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HOM, G
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 794 - 796
[18] PHOTO-LUMINESCENCE STUDY OF ACCEPTORS IN ALXGA1-XAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5163 - 5168
[19] TSAI MJ, 1983, I PHYS C SER, V65, P85
[20] GROWTH OF HIGH-QUALITY ALXGAL-XAS BY OMVPE FOR LASER DEVICES
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 239 - 253

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