NEW PHOTO-LUMINESCENCE LINES IN GAAS-LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：25

作者：

ROTH, AP

GOODCHILD, RG

CHARBONNEAU, S

WILLIAMS, DF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3427 / 3430

页数：4

共 19 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178

[3]

BHATTACHARYA PK, 1982, J APPL PHYS, V53, P6392

[4] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].

BRIONES, F ;

COLLINS, DM .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866

[5] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].

DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[6] CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DINGLE, R ;

WEISBUCH, C ;

STORMER, HL ;

MORKOC, H ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :507-510

[7] THE OCCURRENCE OF SHARP EXCITON-LIKE FEATURES IN LOW-TEMPERATURE PHOTO-LUMINESCENCE SPECTRA FROM MBE GROWN GAAS [J].

DOBSON, PJ ;

SCOTT, GB ;

NEAVE, JH ;

JOYCE, BA .

SOLID STATE COMMUNICATIONS, 1982, 43 (12) :917-919

[8] NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :181-186

[9] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

HIESINGE.P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470

[10] AN ANALYTICAL EVALUATION OF GAAS GROWN WITH COMMERCIAL AND REPURIFIED TRIMETHYLGALLIUM [J].

HESS, KL ;

DAPKUS, PD ;

MANASEVIT, HM ;

LOW, TS ;

SKROMME, BJ ;

STILLMAN, GE .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) :1115-1137

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