THE EFFECT OF NONSTOICHIOMETRY AND POLARITY OF THE (111) PLANE ON MICROTWIN FORMATION IN ION-IMPLANTED GAAS

被引：4

作者：

SHIOTA, I ^{[1
]}

NISHIZAWA, J ^{[1
]}

OYAMA, Y ^{[1
]}

机构：

[1] SEMICOND RES INST,SENDAI 980,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1136 / 1139

页数：4

共 17 条

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[7]

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[9] SITE LOCATION OF AS+-ION-IMPLANTED GAAS BY MEANS OF A MULTIDIRECTIONAL AND HIGH-DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING CHANNELING TECHNIQUE [J].

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[10]

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