A EUTECTIC DISLOCATION ETCH FOR GALLIUM-ARSENIDE

被引：17

作者：

LESSOFF, H

GORMAN, R

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 05期

关键词：

D O I：

10.1007/BF02657922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：733 / 739

页数：7

共 9 条

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ITO, A .

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[4]

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[5]

Richter H., 1974, Kristall und Technik, V9, P1041, DOI 10.1002/crat.19740090909

[6]

SCHELL HA, 1957, Z METALLKD, V48, P158

[7] DISLOCATION ETCH-MEMORY EFFECT IN GALLIUM-ARSENIDE [J].

STIRLAND, DJ ;

OGDEN, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (01) :K1-K4

[8] ETCH PIT STUDY OF GAAS[001] LPE LAYER BY MOLTEN KOH [J].

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HAYASHI, H ;

YAMAMOTO, S ;

MURATA, K ;

INOGUCHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :447-448

[9] DEFECT-REVEALING ETCHES ON GAAS - A COMPARISON OF THE AHA WITH THE A-B AND KOH ETCHES [J].

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